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2022

Understanding the origin of mobility enhancement in wedge-shaped c-GaN nanowall networks utilizing spectroscopic techniques 

Journal of Applied Physics 132, 194305 (2022)

https://doi.org/10.1063/5.0122101

Annealing-dependent changes in the structural and electrical properties of NiO epitaxial films

Semiconductor science and Technology

DOI 10.1088/1361-6641/ac86ea

Enhancement of valley polarization in CVD grown monolayer MoS2 films

Appl. Phys. Lett. 121, 072103 (2022)

https://doi.org/10.1063/5.0103821

Effect of manganese incorporation on the excitonic recombination dynamics in monolayer MoS2

Journal of Applied Physics 131, 205306 (2022)

https://doi.org/10.1063/5.0091443

Structural, electrical, and luminescence properties of (0001) ZnO epitaxial layers grown on c-GaN/sapphire templates by pulsed laser deposition technique

Journal of Applied Physics 131, 015302 (2022)

https://doi.org/10.1063/5.0073311

2021

Oriented assembly of Ni-clusters embedded in semi-insulating NiO epitaxial films

Journal of physics D: Applied physics

DOI 10.1088/1361-6463/ac2c37

Very thin (111) NiO epitaxial films grown on c-sapphire substrates by pulsed laser deposition technique

Semiconductor science and technology

​DOI 10.1088/1361-6641/abed8e

Spin transport in polarization induced two‑dimensional electron gas channel in c‑GaN nano‑wedges

Scientifc Reports

DOI 10.1088/1361-6641/abed8e

Strain-induced variation of bandgap in (111) In2O3 epitaxial films grown on c-sapphire substrates by a pulsed laser deposition technique

Semiconductor science and Technology

DOI 10.1088/1361-6641/abda02

2020

Understanding Negative Photoconductivity Observed in c-Orientated InN Epitaxial Layer

Adv. Science Newshttps://doi.org/10.1002/pssb.202000219

Effect of Oxygen Adsorption on Electrical and Thermoelectrical Properties of Monolayer MoS2

Phys. Rev. Applied 14, 034030

Defect–defect magnetic coupling in Gd doped GaN epitaxial films: A polarization selective magneto-photoluminescence study 

Appl. Phys. Lett. 117, 022108 (2020)

Ammonia assisted low temperature growth of In2O3 (111) epitaxial films on c-sapphire substrates by chemical vapor deposition technique

Journal of vacuum science and Technology A

https://doi.org/10.1116/6.0000038

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